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IXGH48N60A3;IXGA48N60A3;中文规格书,Datasheet资料

IXGH48N60A3;IXGA48N60A3;中文规格书,Datasheet资料

IGBTs

Ultra Low Vsat PT IGBTs forup to 5kHz switching

IXGP48N60A3IXGH48N60A3

CESIC110= 48AVCE(sat)≤

IXGH48N60A3;IXGA48N60A3;中文规格书,Datasheet资料

1.35V

TO-263 (IXGA)

G

SymbolVCESVCGRVGESVGEMIC25IC110ICM

Test Conditions

TJ= 25°C to 150°C

TJ= 25°C to 150°C, RGE = 1MΩContinuousTransient

Maximum Ratings 600 600

VVVV

A A

A

AW°C°C°C

°C

°C

E

TO-220 (IXGP)

±20 ±30

TC= 25°C 120TC= 110°C 48TC= 25°C, 1ms 300

TO-247 (IXGH)

ICM = 96SSOAVGE = 15V, TVJ = 125°C, RG = 5Ω

(RBSOA) Clamped Inductive Load VCE ≤ VCESPCTJTJMTstgTL

TSOLDFCMdWeight

Maximum Lead Temperature for Soldering1.6 mm (0.062in.) from Case for 10sTC= 25°C

300

-55 ... +150

150

-55 ... +150

300260

G = GateE = EmitterC = CollectorTab = Collector

Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in.TO-263TO-220TO-247

2.5

3.06.0

g g g

Features

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Optimized for Low Conduction LossesSquare RBSOA

High Current Handling CapabilityInternational Standard Packages

Advantages

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Symbol Test Conditions Characteristic Values(TJ = 25°C unless otherwise specified)BVCESVGE(th)ICESIGESVCE(sat)

IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES, VGE = 0V

TJ = 125°C

VCE = 0V, VGE = ± 20V IC = 32A, VGE = 15V, Note 1

600

V

3.0 V

μA

μA

nA

z

High Power Density

Low Gate Drive Requirement

Applications

IXGH48N60A3;IXGA48N60A3;中文规格书,Datasheet资料

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Power Inverters

IXGH48N60A3;IXGA48N60A3;中文规格书,Datasheet资料

UPS

Motor DrivesSMPS

PFC CircuitsBattery ChargersWelding MachinesLamp Ballasts

Inrush Current Protection Circuits

© 2012 IXYS CORPORATION, All Rights ReservedDS99581D(03/12)

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